Laser Activation of Single Group-IV Colour Centres in Diamond

Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrat...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2024-09
Main Authors: Cheng, Xingrui, Thurn, Andreas, Chen, Guangzhao, Jones, Gareth S, Maddison Coke, Mason Adshead, Michaels, Cathryn P, Balci, Osman, Ferrari, Andrea C, Atatüre, Mete, Curry, Richard, Smith, Jason M, Salter, Patrick S, Gangloff, Dorian A
Format: Article
Language:English
Subjects:
Color centers
Defect annealing
Ion implantation
Laser beam annealing
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Spin-photon interfaces based on group-IV colour centres in diamond offer a promising platform for quantum networks. A key challenge in the field is realizing precise single-defect positioning and activation, which is crucial for scalable device fabrication. Here we address this problem by demonstrating a two-step fabrication method for tin vacancy (SnV-) centres that uses site-controlled ion implantation followed by local femtosecond laser annealing with in-situ spectral monitoring. The ion implantation is performed with sub-50 nm resolution and a dosage that is controlled from hundreds of ions down to single ions per site, limited by Poissonian statistics. Using this approach, we successfully demonstrate site-selective creation and modification of single SnV- centres. The technique opens a window onto materials tuning at the single defect level, and provides new insight into defect structures and dynamics during the annealing process. While demonstrated for SnV- centres, this versatile approach can be readily generalised to other implanted colour centres in diamond and wide-bandgap materials.
ISSN:2331-8422