Formation of Single and Heterostructured Nanowires Based on InAs1 –xPx Solid Solutions on Si(111)

We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determ...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2024-04, Vol.58 (4), p.327-330
Main Authors: Kaveev, A. K., Fedorov, V. V., Dvoretckaya, L. N., Fedina, S. V., Mukhin, I. S.
Format: Article
Language:English
Subjects:
Epitaxial growth
Heterojunctions
Magnetic Materials
Magnetism
Nanowires
Partial pressure
Physics
Physics and Astronomy
Silicon substrates
Solid solutions
Wurtzite
Zincblende
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Summary:We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001] NWs || [111] Si , [ ] NWs || [ ] Si . A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624040080