Current Generation in Pd/InP Structures in Hydrogen Medium

The electrical properties of Pd/InP Schottky diodes and Pd-layers deposited on glass substrate by thermal evaporation in vacuum, and placed in hydrogen medium containing 10–100 vol % of hydrogen, were studied. The current generation in Pd/InP Schottky diodes, as well as the decrease in resistance of...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2024-04, Vol.58 (4), p.349-353
Main Authors: Shutaev, V. A., Sidorov, V. G., Grebenshchikova, E. A., Yakovlev, Yu. P.
Format: Article
Language:English
Subjects:
Atomic structure
Circuits
Electrical properties
Free electrons
Glass substrates
Hydrogen atoms
Indium phosphides
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Schottky diodes
Vacuum thermal evaporation
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The electrical properties of Pd/InP Schottky diodes and Pd-layers deposited on glass substrate by thermal evaporation in vacuum, and placed in hydrogen medium containing 10–100 vol % of hydrogen, were studied. The current generation in Pd/InP Schottky diodes, as well as the decrease in resistance of Pd layers were observed in hydrogen medium. It is proposed that the current generation in the structures under study is due to free electrons as result of hydrogen atoms ionization. The current induced by these electrons exists in electric circuit until hydrogen is present in the environment. It is shown that the hydrogen current generators can be created based on the Pd/InP diode structure.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624040134