Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs

— High-voltage gradual p 0 – i – n 0 junctions of Al x Ga 1 – x As 1 – y Sb y with x ~ 0.24 and y ~ 0.05 in the i ‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2024-04, Vol.58 (4), p.354-357
Main Authors: Sobolev, M. M., Soldatenkov, F. Yu
Format: Article
Language:English
Subjects:
Absorption cross sections
Capacitance-voltage characteristics
DX centres
Heterojunctions
Heterostructures
High voltages
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
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Summary:— High-voltage gradual p 0 – i – n 0 junctions of Al x Ga 1 – x As 1 – y Sb y with x ~ 0.24 and y ~ 0.05 in the i ‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the DX -center of the Si donor impurity, with a thermal activation energy E t = 414 meV, a capture cross section σ n = 1.04 × 10 –14 cm 2 , and a concentration N d = 2.4 × 10 15 cm –3 . In the heterostructures studied, there were no deep levels associated with dislocations.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782624040146