High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

• Published in: Applied physics letters 2024-09, Vol.125 (13)
• Main Authors: Li, MuJun, He, MingHao, Wang, XiaoHui, Jiang, Yang, Wen, KangYao, Du, FangZhou, Deng, ChenKai, He, JiaQi, Zhang, Yi, Yu, WenYue, Wang, Qing, Yu, HongYu
• Format: Article
• Language: English
• Subjects: Current loss; Electric fields; Figure of merit; Gallium oxides; Inhomogeneity; Normal distribution; Schottky diodes; Surface roughness; Temperature dependence
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0230034

This study presents a β-Ga2O3 Schottky barrier diode (SBD) with a Mg current blocking layer (Mg-CBL) fabricated via the Mg-doped spin-on-glass (Mg-SOG) technique, affording a surface roughness damage-free thermal doping process. The proposed technique improves the breakdown voltage (BV) of the β-Ga2O3 SBD from 580 to 2200 V and marginally increases the specific on-resistance from 4.0 to 4.8 mΩ cm2, yielding a notable power figure of merit exceeding 1 GW/cm2. The Mg-CBL effectively captures the electrons and mitigates the electric field, leading to a significant increase in BV and slight decrease in the forward current loss. The temperature-dependent I–V curves reveal that the reverse saturation current decreases owing to the physical mechanism of the Mg-CBL structure. Moreover, the Gaussian distribution model is applied to correct the Schottky barrier inhomogeneity stemming from the Mg-CBL. The results illustrate the promising potential of the Mg-CBL fabricated via the Mg-SOG technique for yielding high-performance β-Ga2O3 SBDs.