Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer

In this work, we realize the fabrication of wake-up free Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric (FE) capacitors with metal/dielectric layer/ferroelectric/metal (MIFM) structure by annealing and inserting top dielectric layer (DEL). We find that MIFM capacitors with 1-nm HfO 2 , ZrO 2 , and Al 2...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2024-10, Vol.71 (10), p.6022-6026
Main Authors: Liao, Min, Chai, Junshuai, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu
Format: Article
Language:English
Subjects:
Aluminum oxide
Annealing
Capacitors
dielectric layer (DEL)
Dielectrics
Electric fields
ferroelectric (FE) capacitors
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Hf₀.₅Zr₀.₅O₂ (HZO)
Iron
Tin
wake-up free
Zirconium
Zirconium dioxide
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Summary:In this work, we realize the fabrication of wake-up free Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric (FE) capacitors with metal/dielectric layer/ferroelectric/metal (MIFM) structure by annealing and inserting top dielectric layer (DEL). We find that MIFM capacitors with 1-nm HfO 2 , ZrO 2 , and Al 2 O 3 top DEL still exhibit wake-up free behavior when the annealing temperature decreases from 550 °C to 450 °C. The ab initio calculations reveal that the top DEL suppresses the formation of oxygen vacancies at the TiN/DE and DE/HZO interfaces, which can inhibit the domain pinning effect. In addition, the capacitors with 1-nm DEL demonstrate improved endurance under the same annealing temperature and electric field conditions. Our work is helpful for understanding wake-up effect and for the reliability design of HZO-based FE devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3446753