Effect of Etching Methods on Dielectric Losses in Transmons

Superconducting qubits are considered as a promising platform for implementing a fault tolerant quantum computing. However, surface defects of superconductors and the substrate leading to qubit state decoherence and fluctuations in qubit parameters constitute a significant problem. The amount and ty...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2024-09
Main Authors: Chudakova, T A, Mazhorin, G S, Trofimov, I V, N Yu Rudenko, Mumlyakov, A M, Kazmina, A S, E Yu Egorova, Gladilovich, P A, Chichkov, M V, Maleeva, N A, Tarkhov, M A, Chichkov, V I
Format: Article
Language:English
Subjects:
Chlorine
Dielectric loss
Dielectric relaxation
Dielectric strength
Etching
Fault tolerance
Identification methods
Impact analysis
Quantum computing
Qubits (quantum computing)
Substrates
Superconductors
Surface defects
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Superconducting qubits are considered as a promising platform for implementing a fault tolerant quantum computing. However, surface defects of superconductors and the substrate leading to qubit state decoherence and fluctuations in qubit parameters constitute a significant problem. The amount and type of defects depend both on the chip materials and fabrication procedure. In this work, transmons produced by two different methods of aluminum etching: wet etching in a solution of weak acids and dry etching using a chlorine-based plasma are experimentally studied. The relaxation and coherence times for dry-etched qubits are more than twice as long as those for wet-etched ones. Additionally, the analysis of time fluctuations of qubit frequencies and relaxation times, which is an effective method to identify the dominant dielectric loss mechanisms, indicates a significantly lower impact of two-level systems in the dry-etched qubits compared to the wet-etched ones.
ISSN:2331-8422
DOI:10.48550/arxiv.2409.16097