A Novel Active Inductor Based Low Noise Amplifier for Analog Front End of Bio-medical Applications

• Published in: Arabian journal for science and engineering (2011) 2024, Vol.49 (12), p.16549-16570
• Main Authors: Pritty, Jhamb, Mansi
• Format: Article
• Language: English
• Subjects: Active mirrors; Amplifier design; Amplifiers; Bleeding; CMOS; Current mirrors; Design; Energy dissipation; Engineering; Frequency ranges; Humanities and Social Sciences; Inductance; Inductors; Low noise; Metal oxide semiconductors; multidisciplinary; Power consumption; Research Article-Electrical Engineering; Science; Voltage gain
• ISSN: 2193-567X; 1319-8025; 2191-4281
• DOI: 10.1007/s13369-024-09082-7

This work contributes an area-effective low-noise amplifier design with a vast voltage gain range for a wide frequency range. The novel low-noise amplifier has an input stage, a common-gate stage, and another stage of the common-source technique. It is designed using the current mirror, the current bleeding network, and a new active inductor circuit. The noise-canceling network leads to a reduction of noise and power. The current-bleeding network improves the trans-conductance and provides a reduction in overall noise. Active inductors are crucial for achieving maximal gain, extensive bandwidth values, and low power consumption. Body-biasing technique has improved overall performance of the design. The novel low-noise amplifier is simulated and designed at a 0.5 V input voltage cadence virtuoso GPDK 90 nm and GPDK 45 nm complementary metal-oxide semiconductors (CMOS). The power dissipation of the novel active inductor (AI) is 416 µW with an optimized gain value, a small area requirement, and inductance values that varies with different W/L ratios of AI transistors. Power consumption of this low-noise amplifier is 4.85 mW, with optimized S-parameters values. Additionally, a small area and an optimized gain value also adds to the immense potential offered by proposed designs compared to the state-of-the-art low-noise amplifiers.