Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with InGaN/GaN Multiple Quantum Wells

By numerically solving the self-consistent system of the Schrödinger equations and Poisson electroneutrality, zone diagrams of LED heterostructures with In Ga N/GaN multiple quantum wells have been calculated. The effect of electron–phonon interaction, nonparabolicity of the dispersion relation, and...

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Bibliographic Details
Published in:Moscow University physics bulletin 2024, Vol.79 (4), p.469-476
Main Authors: Burmistrov, E. R., Avakyants, L. P.
Format: Article
Language:English
Subjects:
Current carriers
Electron phonon interactions
Gallium nitrides
Heterostructures
Indium gallium nitrides
Light emitting diodes
Mathematical and Computational Physics
Multi Quantum Wells
Optics and Spectroscopy. Laser Physics
Physics
Physics and Astronomy
Plasmons
Schrodinger equation
Temperature dependence
Theoretical
Wave dispersion
Wave functions
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Summary:By numerically solving the self-consistent system of the Schrödinger equations and Poisson electroneutrality, zone diagrams of LED heterostructures with In Ga N/GaN multiple quantum wells have been calculated. The effect of electron–phonon interaction, nonparabolicity of the dispersion relation, and hybridization of the wave function on the values of the effective mass of major charge carriers in the In Ga N/GaN quantum wells has been studied. The long-wave shift of 2D-plasmon resonances is associated with the temperature renormalization of the effective mass of two-dimensional carriers. To describe the temperature dependence of the effective mass, the function for the displacement of the 2D-plasmon resonance frequency is introduced.
ISSN:0027-1349
1934-8460
DOI:10.3103/S002713492470053X