Experimental and Modeling Investigation of the Temperature Activation of TDDB in Galvanic Isolators Based on Polymeric Dielectrics

We report experimental evidence revealing a nonmonotonic temperature dependence of time-dependent dielectric breakdown (TDDB) in galvanic isolators based on polymeric dielectrics. In particular, the lifetime of the device under TDDB stress decreases when temperature rises from room temperature (RT)...

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Bibliographic Details
Published in:IEEE transactions on dielectrics and electrical insulation 2024-10, Vol.31 (5), p.2580-2586
Main Authors: Mazzola, Jurij L., Greatti, Matteo, Monzio Compagnoni, Christian, Spinelli, Alessandro S., Paci, Dario, Speroni, Fabrizio, Marano, Vincenzo, Lauria, Michele, Malavena, Gerardo
Format: Article
Language:English
Subjects:
Dielectric breakdown
Dielectrics
Galvanic isolators
Isolators
Moisture
Numerical models
polymeric dielectrics
Polymers
Room temperature
semiconductor device modeling
semiconductor device reliability
Service life assessment
Stress
Temperature dependence
time-dependent dielectric breakdown
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Summary:We report experimental evidence revealing a nonmonotonic temperature dependence of time-dependent dielectric breakdown (TDDB) in galvanic isolators based on polymeric dielectrics. In particular, the lifetime of the device under TDDB stress decreases when temperature rises from room temperature (RT) to 100~^{\circ } C and then steeply increases above the latter temperature. This effect, which introduces a turnaround in the Arrhenius plot of device lifetime, is explained as a result of two competing processes leading to the weakening and strengthening of polymeric chains in the dielectric material, respectively. The proposed physical picture is further supported by a simple numerical model that allows to investigate the temperature dependence of TDDB in galvanic isolators based on polymeric dielectrics under various working conditions.
ISSN:1070-9878
1558-4135
DOI:10.1109/TDEI.2024.3403528