Second-order electrogyration effect in BSO crystal

Using a non-holographic optical setup, we employed a Mueller–Stokes polarimeter to measure both the linear electro-optic and second-order electrogyration effects. The second-order electrogyration effect was observed in a B i 12 S i O 20 (BSO) crystal with a (110) cut. This response was found for the...

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Bibliographic Details
Published in:Applied physics. B, Lasers and optics Lasers and optics, 2024-11, Vol.130 (11), Article 197
Main Authors: Guerrero-V, María Alejandra, Rueda-P, Jorge-Enrique
Format: Article
Language:English
Subjects:
Bismuth silicon oxide
Electric fields
Engineering
Lasers
Optical Devices
Optics
Photonics
Physical Chemistry
Physics
Physics and Astronomy
Quantum Optics
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Summary:Using a non-holographic optical setup, we employed a Mueller–Stokes polarimeter to measure both the linear electro-optic and second-order electrogyration effects. The second-order electrogyration effect was observed in a B i 12 S i O 20 (BSO) crystal with a (110) cut. This response was found for the electric field applied both parallel and perpendicular to the [001] direction, where the values for the second-order electrogyration are 4.86 × 10 7 pm 2 / V 2 and 1.87 × 10 7 pm 2 / V 2 , respectively. Additionally, the linear electro-optic coefficient γ 41 was measured to be 1.17 pm/V for 660.5 nm .
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-024-08327-5