Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200{\deg}C

The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).

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Bibliographic Details
Published in:arXiv.org 2024-10
Main Authors: Fiorenza, P, Cordiano, F, Alessandrino, S M, Russo, A, Zanetti, E, Saggio, M, Bongiorno, C, Giannazzo, F, Roccaforte, F
Format: Article
Language:English
Subjects:
Bias
Dielectric breakdown
MOSFETs
Silicon carbide
Time dependence
Online Access:Get full text
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Description
Summary:The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
ISSN:2331-8422