Initial variations and optimization of electro-optic properties in CdSe/ZnS quantum-dot light-emitting diodes with ZnO nanoparticle electron transport layers

This study delves into the performance and stability of quantum-dot light-emitting diodes (QLEDs), with a specific focus on the initial variations in device properties and the effectiveness of various stabilization strategies. We assess the impact of initial bias conditions, reverse bias treatment,...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-10, Vol.63 (10), p.107001
Main Authors: Hyeong, Da-Yeon, Lee, Honyeon
Format: Article
Language:English
Subjects:
Annealing
Bias
Cadmium selenides
Electron transport
Heat treatment
initial degradation
Light emitting diodes
QLEDs
Quantum dots
Reliability
reverse bias
thermal annealing
Zinc oxide
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study delves into the performance and stability of quantum-dot light-emitting diodes (QLEDs), with a specific focus on the initial variations in device properties and the effectiveness of various stabilization strategies. We assess the impact of initial bias conditions, reverse bias treatment, thermal annealing of the zinc oxide electron transport layer (ZnO electron transporting layer), and the effects of shelf storage on device reliability and efficiency. Our findings reveal that QLEDs are highly sensitive to initial bias conditions, yet this sensitivity can be significantly reduced through strategic interventions such as thermal annealing and reverse bias applications. These treatments are shown to markedly enhance the operational reliability of the devices. By providing deep insights into the mechanisms behind the initial variations in QLED properties, our research outlines practical measures for improving their performance and reliability, with profound implications for the advancement of high-performance display technologies.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad85b6