Observation of doping-induced spin–orbit coupling in gold cluster assembly to carrier-tuneable semiconductors and Schottky behaviors

The doping influenced carrier dynamics to maneuvering n-type to p-type semiconducting gold cluster assembly have been assessed. The resonance photoemission spectroscopic measurements corroborate an incremental rise in the density of states at the valence edge, the overlap of valence states due to do...

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Bibliographic Details
Published in:Journal of applied physics 2024-10, Vol.136 (16)
Main Authors: Dash, P. P., Kabiraj, A., Mallik, G., Kumari, P., Jha, S. N., Kumar, Yogesh, Rath, S.
Format: Article
Language:English
Subjects:
Assembly
Atomic properties
Clusters
Current carriers
Current voltage characteristics
Doping
Gold
Manganese
N-type semiconductors
Orbital mechanics
Orbital resonances (celestial mechanics)
P-type semiconductors
Photoelectric emission
Relativistic effects
Spin dynamics
Spin-orbit interactions
Valence
Work functions
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Summary:The doping influenced carrier dynamics to maneuvering n-type to p-type semiconducting gold cluster assembly have been assessed. The resonance photoemission spectroscopic measurements corroborate an incremental rise in the density of states at the valence edge, the overlap of valence states due to doping, and the presence of distinct spin–orbit splitting and coupling in manganese-doping (Au7Mn) compared to gold clusters (Au8), originating from the relativistic effect resulted in a semiconducting property. The work function dependent current–voltage characteristics in metal–semiconductor configuration show Ohmic and Schottky behaviors assorting p-type carriers in Au7Mn in contrast to the n-type Au8 and are presenting an atomic cluster based fast electronic device.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0228521