High Power and Low Power Consumption Raman Pump Lasers With Electric Field Control Layer for Wide-Bands Raman Amplification

• Published in: IEEE journal of selected topics in quantum electronics 2025-03, Vol.31 (2: Pwr. and Effic. Scaling in Semiconductor Lasers), p.1-9
• Main Authors: Yoshida, Junji, Hojo, Naoya, Wakaba, Masaki, Seki, Masayoshi, Sakaguchi, Keiji, Tanaka, Motoyuki, Kamada, Shun, Kokawa, Takuya, Isozaki, Yusuke, Kasukawa, Akihiko
• Format: Article
• Language: English
• Subjects: Banded structure; Broadband; Electric fields; Fiber lasers; fiber Raman amplifiers; GaInAsP/InP electric field control layers; Gallium indium arsenide phosphide; High temperature; Indium phosphides; Laser excitation; Mass production; Optical fiber amplifiers; Optical fibers; Power consumption; Pump lasers; Raman pump laser; Stimulated emission; Waveguide lasers
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2024.3430223

To realize high-power GaInAsP/InP pump lasers for Raman amplifiers, we propose a laser with a GaInAsP/InP electric field control layer that has high design freedom and is suitable for mass production. This laser structure realizes high power and low power consumption of Raman pump lasers with fiber output power exceeding 1 W at high temperature operation of 35 °C, and extremely low power consumption of 3.7 W at 55 °C with 0.5 W fiber output power is demonstrated. We also demonstrate that this laser structure is effective in achieving high-power fiber output power exceeding 0.78 W at 35 °C in the range from 1395 nm to 1547 nm for the application of broadband Raman amplification, which is a key technology for ultra-high-speed large-capacity optical transmission systems using digital coherent systems.