First-principles insights into thermoelectric behavior of XNiAs (X = Sc, Y) half-Heusler compounds

• Published in: Materials research express 2024-11, Vol.11 (11), p.115501
• Main Authors: Giri, Ashesh, Khatri, Prakash, Neupane, Hari Krishna, Adhikari, Narayan Prasad
• Format: Article
• Language: English
• Subjects: Density functional theory; Doping; Figure of merit; First principles; Magnetic properties; Magnetic semiconductors; phonon dispersion; Room temperature; Thermal conductivity; Thermoelectric materials; Transport theory
• ISSN: 2053-1591; 2053-1591
• DOI: 10.1088/2053-1591/ad8d35

Half-Heusler (HH) compounds are regarded as potential candidates for thermoelectric devices to convert waste heat energy into electrical power, which could help mitigate the ongoing energy crisis. In this study, we investigate the structural, electronic, magnetic, and thermoelectric properties of HH compounds XNiAs (X = Sc, Y) using Density Functional Theory (DFT) and semi-classical Boltzmann transport theory (BTE). The compounds are non-magnetic semiconductors with an indirect band gap of 0.48 ( 0.50) eV for ScNiAs (YNiAs) respectively. Both materials show dynamic and mechanical stability, with ScNiAs displaying brittleness and YNiAs exhibiting ductility. At room temperature, the lattice thermal conductivity ( κ l ) for ScNiAs is 28.67 W/mK, while for YNiAs, it is 15.21 W/mK and both decrease as the temperature rises. The highest value of power factors is 29.03 μ W/cmK 2 and 29.74 μ W/cmK 2 for ScNiAs and YNiAs respectively at 1100 K for n-type doping. The optimal values of the figure of merit (zT) for n-type doping are 0.33 for ScNiAs and 0.58 for YNiAs at 1100 K. Both compounds exhibit better thermoelectric performance for n-type doping compared to p-type doping. The presence of flat bands and higher κ l limits these materials from achieving higher zT values.