Dynamic RON Degradation Suppression by Gate Field Plate in Partially Recessed AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2024-11, Vol.221 (21), p.n/a
• Main Authors: Liang, Ye, He, Xiuyuan, Feng, Xi, Zhang, Yuanlei, Zhang, Jie, Liu, Wen
• Format: Article
• Language: English
• Subjects: AlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistors; Aluminum gallium nitrides; Degradation; dynamic on‐resistances; field plates; Gallium nitrides; High electron mobility transistors; MIS (semiconductors)
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.202300976

This study investigates the impact of gate field plate (G‐FP) lengths on the dynamic on‐resistance degradation in partially recessed‐gate D‐mode GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs). Devices with G‐FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G‐FPs effectively reduce electron trapping and suppress the dynamic on‐resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN‐based MIS‐HEMTs. This study investigates the impact of gate field plate (G‐FP) lengths on the dynamic on‐resistance degradation in partially recessed‐gate D‐mode GaN MIS‐HEMTs. Devices with G‐FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G‐FPs effectively reduces electron trapping and suppresses the dynamic on‐resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN‐based MIS‐HEMTs.