Estimation of Junction Temperature in Single 228nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency

The increasing resistance of methicillin‐resistant Staphylococcusaureus to antibiotics is a major challenge faced by mankind in thehistory of medical science and according to United Nations, 700‐000 patients worldwide die every year from an infection with multidrug‐resistant organisms (MROs). Alumin...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2024-11, Vol.221 (21)
Main Authors: Khan, Muhammad Ajmal, Muta, Mitsuhiro, Fujimoto, Kohei, Javier Gonzalez Rojas, Fredes, Pablo, Gramsch, Ernesto, Iwaisako, Yasushi, Yaguchi, Hiroyuki, Hirayama, Hideki
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Chemical composition
Chemical vapor deposition
Electrodes
Gold
Light emission
Light emitting diodes
Medical science
Organic chemicals
Organic chemistry
Quantum efficiency
Sapphire
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Summary:The increasing resistance of methicillin‐resistant Staphylococcusaureus to antibiotics is a major challenge faced by mankind in thehistory of medical science and according to United Nations, 700‐000 patients worldwide die every year from an infection with multidrug‐resistant organisms (MROs). Aluminum gallium nitride‐based 228 nm Far‐ultraviolet‐C (Far‐UVC) lightsources can be safely used as a germicidal application in both manned as wellas in unmanned environments against these MROs. Previously, the 228 nm Far‐UVC light‐emitting diode (LED) with emission power of 1 mW was reported by ourgroup, however, the value of external quantum efficiency (EQE) was not reportedusing conventional thick Ni (20 nm)/Au (100 nm) p‐electrode. Herein, animproved Far‐UVC LED on c‐Sapphire is attempted using a special technique in SR4000 type of metal‐organic chemical vapor deposition reactor to control the Al composition in n‐AlGaN buffer and across the 2 inch‐wafer. As a result, the light emission power of 1.8 mW and EQE of 0.32% in 228 nm Far‐UVC LED aresuccessfully achieved using very thin p‐electrode (Ni/Au). However, arelatively high junction temperature of ≈100°C around thejunction of Far‐UVC LED is observed. Finally, some simple heat‐sink modules forheat dissipation of Far‐UVC LED panel with light power of 30 mW are implemented.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202400064