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Unraveling the relationship between the phenethylammonium-induced 2D phase on the perovskite surface and inverted wide bandgap perovskite solar cell performance
Two- and three-dimensional (2D/3D) heterojunctions have been widely used to improve the performance of n-type/intrinsic/p-type (NIP) structured perovskite solar cells (PSCs). However, the electron blocking nature of the 2D ligands, such as phenethylammonium (PEA + ), on the perovskite surface is not...
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Published in: | Energy & environmental science 2024-11, Vol.17 (22), p.8658-8669 |
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Main Authors: | , , , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Two- and three-dimensional (2D/3D) heterojunctions have been widely used to improve the performance of n-type/intrinsic/p-type (NIP) structured perovskite solar cells (PSCs). However, the electron blocking nature of the 2D ligands, such as phenethylammonium (PEA
+
), on the perovskite surface is not conducive to PSCs with a p-type/intrinsic/n-type (PIN) structure. In this work, we improve the device performance by eliminating the 2D phase on the perovskite surface through the subsequent annealing process. After eliminating the 2D phase, a dipole layer forms with the remaining PEA
+
, resulting in an excellent energy level alignment between the perovskite and electron transport layer. As a result, the solar cells with the PIN structure using a 1.67 eV wide-bandgap triple-cation perovskite show an enhanced power conversion efficiency of 20.61% with a short circuit current density of 20.05 mA cm
−2
and a fill factor of 81.57%. Furthermore, the open-circuit voltage (
V
OC
) is improved from 1.20 V to 1.26 V, yielding a
V
OC
deficit of 410 mV, which represents one of the lowest values among the PIN structured wide-bandgap PSCs.
We studied the impact of phenethylammonium chloride on PIN-structured wide bandgap perovskite solar cells. Elimination of the 2D phase results in a champion efficiency of 20.61% and a
V
OC
loss of only 410 mV with hysteresis-free
J-V
curves. |
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ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/d4ee02133a |