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Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface
We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H 2 /CH...
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Published in: | Journal of materials science. Materials in electronics 2024-11, Vol.35 (32), p.2061, Article 2061 |
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container_title | Journal of materials science. Materials in electronics |
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creator | Akcay, Neslihan Yıldırım, Ali Rıza Kesik, Deha Gremenok, Valery F. Özçelik, Süleyman Ceylan, Abdullah |
description | We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H
2
/CH
4
at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo
2
C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo
2
C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS
2
peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS. |
doi_str_mv | 10.1007/s10854-024-13854-0 |
format | article |
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2
/CH
4
at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo
2
C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo
2
C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS
2
peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-024-13854-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorbers ; Carbon ; Characterization and Evaluation of Materials ; Chemical vapor deposition ; Chemistry and Materials Science ; Crystallites ; Diffusion barriers ; Efficiency ; Electrical resistivity ; Gas mixtures ; Graphene ; Interfaces ; Materials Science ; Morphology ; Multilayers ; Optical and Electronic Materials ; Photonics ; Physical vapor deposition ; Raman spectra ; Raman spectroscopy ; Sulfurization</subject><ispartof>Journal of materials science. Materials in electronics, 2024-11, Vol.35 (32), p.2061, Article 2061</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-b7d057ea6011c1f5cfb56fe20ab2a6624afb8db1a1bcca4deab8537ab2e5605b3</cites><orcidid>0000-0002-3948-5629</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Akcay, Neslihan</creatorcontrib><creatorcontrib>Yıldırım, Ali Rıza</creatorcontrib><creatorcontrib>Kesik, Deha</creatorcontrib><creatorcontrib>Gremenok, Valery F.</creatorcontrib><creatorcontrib>Özçelik, Süleyman</creatorcontrib><creatorcontrib>Ceylan, Abdullah</creatorcontrib><title>Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H
2
/CH
4
at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo
2
C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo
2
C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS
2
peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS.</description><subject>Absorbers</subject><subject>Carbon</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical vapor deposition</subject><subject>Chemistry and Materials Science</subject><subject>Crystallites</subject><subject>Diffusion barriers</subject><subject>Efficiency</subject><subject>Electrical resistivity</subject><subject>Gas mixtures</subject><subject>Graphene</subject><subject>Interfaces</subject><subject>Materials Science</subject><subject>Morphology</subject><subject>Multilayers</subject><subject>Optical and Electronic Materials</subject><subject>Photonics</subject><subject>Physical vapor deposition</subject><subject>Raman spectra</subject><subject>Raman spectroscopy</subject><subject>Sulfurization</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kE1r3DAQhkVJoZtt_0BPgp6dHcmS7fZWtklaSEhgN6HkIkbyOOuw_qikPfgf9GdHWQdyy2kG5nnfgYexrwLOBEC5CgIqrTKQKhP5cfvAFkKXeaYq-feELeC7LjOlpfzETkN4AoBC5dWC_V8f5EO_6TeKN-2-C3z0NKKnmtuJI99N1rc1v73_xWsah9DGduh5mEKk7ke6d4d9bLM9TvQSefQ47hLiuENvE9j2kXxHdYuR-JHiGHncEb8eVuuH7WYmGnT0mX1scB_oy-tcsruL8-36d3Z1c_ln_fMqcxIgZrasQZeEBQjhRKNdY3XRkAS0EotCKmxsVVuBwjqHqia0lc7LdCVdgLb5kn2be0c__DtQiOZpOPg-vTS5kKWSUssyUXKmnB9C8NSY0bcd-skIMC_GzWzcJOPmaNxACuVzKCS4fyT_Vv1O6hlV8YXc</recordid><startdate>20241101</startdate><enddate>20241101</enddate><creator>Akcay, Neslihan</creator><creator>Yıldırım, Ali Rıza</creator><creator>Kesik, Deha</creator><creator>Gremenok, Valery F.</creator><creator>Özçelik, Süleyman</creator><creator>Ceylan, Abdullah</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3948-5629</orcidid></search><sort><creationdate>20241101</creationdate><title>Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface</title><author>Akcay, Neslihan ; Yıldırım, Ali Rıza ; Kesik, Deha ; Gremenok, Valery F. ; Özçelik, Süleyman ; Ceylan, Abdullah</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-b7d057ea6011c1f5cfb56fe20ab2a6624afb8db1a1bcca4deab8537ab2e5605b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorbers</topic><topic>Carbon</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical vapor deposition</topic><topic>Chemistry and Materials Science</topic><topic>Crystallites</topic><topic>Diffusion barriers</topic><topic>Efficiency</topic><topic>Electrical resistivity</topic><topic>Gas mixtures</topic><topic>Graphene</topic><topic>Interfaces</topic><topic>Materials Science</topic><topic>Morphology</topic><topic>Multilayers</topic><topic>Optical and Electronic Materials</topic><topic>Photonics</topic><topic>Physical vapor deposition</topic><topic>Raman spectra</topic><topic>Raman spectroscopy</topic><topic>Sulfurization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Akcay, Neslihan</creatorcontrib><creatorcontrib>Yıldırım, Ali Rıza</creatorcontrib><creatorcontrib>Kesik, Deha</creatorcontrib><creatorcontrib>Gremenok, Valery F.</creatorcontrib><creatorcontrib>Özçelik, Süleyman</creatorcontrib><creatorcontrib>Ceylan, Abdullah</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Akcay, Neslihan</au><au>Yıldırım, Ali Rıza</au><au>Kesik, Deha</au><au>Gremenok, Valery F.</au><au>Özçelik, Süleyman</au><au>Ceylan, Abdullah</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2024-11-01</date><risdate>2024</risdate><volume>35</volume><issue>32</issue><spage>2061</spage><pages>2061-</pages><artnum>2061</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H
2
/CH
4
at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo
2
C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo
2
C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS
2
peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-024-13854-0</doi><orcidid>https://orcid.org/0000-0002-3948-5629</orcidid></addata></record> |
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subjects | Absorbers Carbon Characterization and Evaluation of Materials Chemical vapor deposition Chemistry and Materials Science Crystallites Diffusion barriers Efficiency Electrical resistivity Gas mixtures Graphene Interfaces Materials Science Morphology Multilayers Optical and Electronic Materials Photonics Physical vapor deposition Raman spectra Raman spectroscopy Sulfurization |
title | Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface |
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