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Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface

We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H 2 /CH...

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Published in:Journal of materials science. Materials in electronics 2024-11, Vol.35 (32), p.2061, Article 2061
Main Authors: Akcay, Neslihan, Yıldırım, Ali Rıza, Kesik, Deha, Gremenok, Valery F., Özçelik, Süleyman, Ceylan, Abdullah
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container_title Journal of materials science. Materials in electronics
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Yıldırım, Ali Rıza
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Özçelik, Süleyman
Ceylan, Abdullah
description We report the insertion of a new intermediate layer, a multi-layered graphitic carbon (MLGC), at Mo/CZTS interface and its impact on the structural and morphological characteristics of the back interface and absorber. MLGC was synthesized directly on Mo-coated SLG under a gas mixture flow of H 2 /CH 4 at 550 °C via PECVD for 3 and 5 h. CZTS precursors were prepared on SLG/Mo and MLGC-coated SLG/Mo in a hybrid physical vapor deposition system, including evaporation and sputtering techniques, then subjected to sulfurization at 550 °C. The sheet resistance of back contact, microstructural parameters of the absorbers, the distributions of C and constituent elements were investigated. The diffraction peaks of the hexagonal Mo 2 C indicated the reaction between the C and Mo before the MLGC’s growth. Raman analysis confirmed the formation of the MLGC during the long deposition time after the Mo 2 C formation. With the addition of MLGC, the sheet resistance of the back contact decreased from 2 to 0.5 Ω/sq, and the crystallite size of the absorbers improved. Raman spectra from the interface exhibited that MoS 2 peaks’ intensities significantly reduced with increasing the growth time. This implied that the 5 h-deposited MLGC was more effective in blocking the reaction between Mo and S. The absorbers with the MLGC had more uniform surface morphologies, densely packed grains, and fewer secondary phases. FIB analysis revealed the separation of the absorber with the 5 h-deposited MLGC into two parts due to C impurity. More C diffusion into the absorber for this sample was confirmed by SIMS.
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subjects Absorbers
Carbon
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemistry and Materials Science
Crystallites
Diffusion barriers
Efficiency
Electrical resistivity
Gas mixtures
Graphene
Interfaces
Materials Science
Morphology
Multilayers
Optical and Electronic Materials
Photonics
Physical vapor deposition
Raman spectra
Raman spectroscopy
Sulfurization
title Cu2ZnSnS4 films prepared by a hybrid PVD deposition system: a multi-layered graphitic carbon intermediate layer at the Mo/CZTS interface
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