Evaluation of degradation phenomena in the electric potential distribution inside organic light-emitting diodes by electron holography

• Published in: Applied physics letters 2024-11, Vol.125 (20)
• Main Authors: Sasaki, Yusei, Anada, Satoshi, Yoshimoto, Noriyuki, Yamamoto, Kazuo
• Format: Article
• Language: English
• Subjects: Carrier injection; Charge injection; Diamines; Electric charge; Electric fields; Electrons; Holography; Hydroxyquinoline; Light emitting diodes; Organic light emitting diodes; Photodegradation; Service life assessment; Spatial resolution; Transmission electron microscopy
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0234923

Understanding the intrinsic degradation processes of organic light-emitting diodes is necessary to improve their lifetimes. This intrinsic degradation is typically caused by carrier injection at the interface between the hole transport layer (HTL) and the emissive layer (EML). However, revealing the charge behavior in this local region with a high spatial resolution remains challenging. Thus, this study employed electron holography, a transmission electron microscopy (TEM) technique, to measure the nanometer scale potential distribution inside an OLED composed of N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (α-NPD) and tris-(8-hydroxyquinoline)aluminum (Alq3) that was degraded via continuous voltage application. The α-NPD and Alq3 functioned as the HTL and EML, respectively. The degraded OLED was found to exhibit several potential distributions, depending on the local positions from which the TEM samples were lifted out of the same bulk sample. The distributions included (i) formation of a potential valley at the α-NPD/Alq3 interface, (ii) disappearance of electric fields within the organic layers, and (iii) similar distribution to original before degradation. We suggest that the degradation was caused by charge accumulation, cationization of Alq3, and local failures. Thus, this study revealed the influence of electric degradation at the nanometer scale because of charge injection to the α-NPD/Alq3 interface. Electron holographic degradation analysis near the HTL/EML interface is expected to aid in the development of design guidelines for preventing device degradation and thus extend device lifetime.