Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer

Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VM...

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Bibliographic Details
Published in:arXiv.org 2024-11
Main Authors: Sahoo, Krishna Rani, Talluri, Manoj, Maity, Dipak, Mundlia, Suman, Lal, Ashique, Devapriya, M S, Haldar, Arabinda, Chandrasekhar Murapaka, Narayanan, Tharangattu N
Format: Article
Language:English
Subjects:
Doping
Electric potential
Electrical resistivity
Ferromagnetic resonance
Ferromagnetism
Ferrous alloys
Magnetic alloys
Molybdenum disulfide
Monolayers
Room temperature
Spin-orbit interactions
Torque
Transition metals
Vanadium
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Summary:Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices.
ISSN:2331-8422