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Synthesis of Mg-doped hydroxyapatite for enhanced photocatalytic degradation of Congo red dye: a crystallographic characterization

In this research work, to synthesize Mg-doped and pure hydroxyapatite (HAp), a procedure was applied known as wet chemical. The synthesized samples were characterized by applying the X-ray diffractometer and the samples were also used to evaluate the photocatalytic degradation of congo red dye. Latt...

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Bibliographic Details
Published in:Nanotechnology for environmental engineering 2024-12, Vol.9 (4), p.783-799
Main Authors: Sahadat Hossain, Md, Alam, Md. Kawcher, Tabassum, Sumaya, Ahmed, Samina
Format: Article
Language:English
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Summary:In this research work, to synthesize Mg-doped and pure hydroxyapatite (HAp), a procedure was applied known as wet chemical. The synthesized samples were characterized by applying the X-ray diffractometer and the samples were also used to evaluate the photocatalytic degradation of congo red dye. Lattice strain and crystallite size were calculated with the help of the X-ray diffraction data by conducting different model equations like Scherrer equation, Linear Straight-Line model, Monshi-Scherrer model, Sahadat-Scherrer model, Halder-Wagner model, Williamson-Hall model, and Size-Strain Plot. All the computed crystallite sizes were compared to check their validity and XRD investigation confirmed that the crystal sizes of all the samples were in the valid extent except the values of the Linear Straight-Line Model. Positive values of lattice strain for 0.5% Mg-doped HAp and pure HAp indicate that there is lattice expansion in the case of these samples. But 5% Mg-doped HAp and 1% Mg-doped HAp contain lattice contraction in their lattice structure as they give negative strain. All the calculated crystallite sizes were compared to check their validity. Optical bandgap energies were also estimated for the synthesized products. In the end, the photocatalytic efficacy was evaluated by degrading Congo red dye at various conditions to examine the effect of Mg doping in HAp crystal.
ISSN:2365-6379
2365-6387
DOI:10.1007/s41204-024-00395-4