Controlled growth of 3D topological insulator BiSb(Te 1− y Se y ) 3 nanocrystals via chemical vapor transport

The structural and electrical properties of thin nanocrystals of the 3D topological insulator BiSb(Te 1− y Se y ) 3 ( y = 0, 0.01, 0.02, …, 0.09) have been investigated. The nanostructures were synthesized from bulk parent BiSb(Te 1− y Se y ) 3 polycrystalline powder on different substrate materials...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-11, Vol.12 (45), p.18416-18426
Main Authors: Abdelrahman, Nour, Charvin, Titouan, Froeschke, Samuel, Giraud, Romain, Dufouleur, Joseph, Popov, Alexey, Schiemenz, Sandra, Wolf, Daniel, Büchner, Bernd, Mertig, Michael, Hampel, Silke
Format: Article
Language:English
Subjects:
Atomic structure
Carrier mobility
Chemical composition
Chemical synthesis
Crystal growth
Crystal structure
Current carriers
Electrical properties
High resolution electron microscopy
Magnetic properties
Microscopy
Nanocrystals
Single crystals
Topological insulators
Transport properties
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Summary:The structural and electrical properties of thin nanocrystals of the 3D topological insulator BiSb(Te 1− y Se y ) 3 ( y = 0, 0.01, 0.02, …, 0.09) have been investigated. The nanostructures were synthesized from bulk parent BiSb(Te 1− y Se y ) 3 polycrystalline powder on different substrate materials using the bottom-up chemical vapor transport (CVT) method without the addition of transport agents, resulting in well-faceted and thin single crystals with dimensions of ∼20 μm in length and ∼20 nm in height. Thermodynamic calculations were performed to optimize the growth process. The chemical composition and morphology of the nanocrystals were analyzed by energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. The R 3̄ m crystal structure of individual nanocrystals and their high crystalline quality were studied by high-resolution transmission electron microscopy. Magnetotransport measurements confirm that bulk-charge compensation could be achieved by adding a small amount of Se to the ternary compound BiSbTe 3 , and the transport properties of thin flakes further reveal the enhanced carrier mobility of topological surface-state carriers.
ISSN:2050-7526
2050-7534
DOI:10.1039/D4TC02508C