Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current

The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2Pr value of 74 µC/cm2), it exhibited a...

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Bibliographic Details
Published in:Electronics (Basel) 2024-11, Vol.13 (22), p.4515
Main Authors: Joo, Hyeong Jun, Yoon, Si Sung, Oh, Seung Yoon, Lim, Yoojin, Lee, Gyu Hyung, Yoo, Geonwook
Format: Article
Language:English
Subjects:
Capacitors
Electric fields
Ferroelectric materials
Ferroelectricity
Hafnium oxide
Interlayers
Leakage current
Molecular beam epitaxy
Organic chemicals
Room temperature
Temperature
Temperature dependence
Thin films
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Summary:The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2Pr value of 74 µC/cm2), it exhibited a reduced leakage current (×1/100) and higher breakdown field. The MFIM showed a stable change in 2Pr from room temperature to 200 °C and an enhanced endurance of ~104 cycles at 200 °C; moreover, the leakage current was less degraded after the cycling tests. Thus, the ferroelectric AlScN with a thin HfO2 interlayer can enhance the reliability of ferroelectric switching.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics13224515