Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors

In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the el...

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Bibliographic Details
Published in:IEEE electron device letters 2024-12, Vol.45 (12), p.2431-2434
Main Authors: Kim, Heetae, Park, Seohak, Jeong, Johak, Jeon, Jihoon, Lee, Hoseok, Sung, Chihun, Na, Jeho, Ju Kim, Min, Keun Kim, Seong, Choi, Sung-Yool, Heo, Keun, Haeng Cho, Sung, Jin Cho, Byung
Format: Article
Language:English
Subjects:
1T-1C DRAM
Annealing
Capacitors
Crystallization
Dielectrics
High temperature
high-k dielectric
High-k dielectric materials
Indium gallium zinc oxide
Intense pulsed light
Leakage current
Leakage currents
oxide semiconductor
Random access memory
Rapid thermal annealing
Tin
Transistors
Xenon
Zirconium dioxide
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Summary:In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of 1.3\times 10^{-{16}} A/ \mu m, even after the high-k dielectric crystallization process.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3485609