Single Event Effects of Low-Voltage N-Type and P-Type Trench-Gate MOSFET Devices

• Published in: IEEE electron device letters 2024-01, Vol.45 (12), p.2288-2290
• Main Authors: Wu, Hao, Hu, Shengdong, Xiang, Fan, Fu, Xiaojun, Wang, Yan, Luo, Jun, Yang, Manlin, Wang, Ziwei, Yang, Xiaoyu
• Format: Article
• Language: English
• Subjects: Devices; Electric fields; Epitaxial growth; JFETs; Logic gates; Low voltage; MOSFET; MOSFETs; Radiation; Radiation dosage; Radiation effects; Radiation hardening; Radiation hardening (electronics); safe operating area; SEE-hardened; Silicon; single event effect; Single Event Effects; Substrates; Transistors; Trench-gate MOSFETs
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2024.3477444

Silicon based MOSFETs are one of the most popular devices in electronic fields due to their electrical stability and mature system integration compared with other wide band-gap materials. Researches of total ionizing dose effect and single event effect on the radiation effects and radiation hardened approaches of planar-gate MOSFET devices are widely carried out. While mechanisms on irradiation effects of trench-gate MOSFET devices are still under research. To deeply understand the single event effects of trench-gate MOSFET devices, we fabricated four types of radiation hardened trench-gate MOSFET devices, two of which are N-type (30V and 60V) and the other two are P-type (30V and 55V). Different from planar-gate MOSFET devices, single event gate rupture of trench-gate MOSFET devices is less severe, due to the fact that the energy is weakened during the long path of the trench gate. After designing and fabricating novel SEE-hardened devices, SEE experimental results indicate that both the designed N-type and P-type fabricated trench-gate MOSFET devices can bear 75 MeV(mg/cm ^{{2}}\text {)} at their separate {\textit {BV}}_{\text {DSS}} . And all the single event safe operating areas are shown.