Selective synthesis of large-area monolayer tin sulfide from simple substances

Both tin monosulfide (SnS) and tin disulfide (SnS2) are thermodynamically stable layered materials with potential for spin-valleytronic devices and photodetectors. Notably, monolayer SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persis...

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Bibliographic Details
Published in:arXiv.org 2024-11
Main Authors: Koyama, Kazuki, Ishihara, Jun, Odagawa, Takeshi, Aoyama, Makito, Zhang, Chaoliang, Entani, Shiro, Fan, Ye, Mori, Atsuhiko, Kitakami, Ibuki, Yamamoto, Sota, Omori, Toshihiro, Cho, Yasuo, Hofmann, Stephan, Kohda, Makoto
Format: Article
Language:English
Subjects:
Atomic properties
Crystal growth
Electron spin
Ferroelectricity
High temperature
Interlayers
Layered materials
Monolayers
Tin disulfide
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Summary:Both tin monosulfide (SnS) and tin disulfide (SnS2) are thermodynamically stable layered materials with potential for spin-valleytronic devices and photodetectors. Notably, monolayer SnS, owing to its low symmetry, exhibits interesting properties such as ferroelectricity, shift-current, and a persistent spin helix state in the monolayer limit. However, creating atomic-thickness crystals of SnS is challenging owing to the enhanced interlayer interactions caused by lone pair electrons, unlike to SnS2. Here, we demonstrate that p-type SnS can be selectively grown by simply varying the sulfur vapor concentration relative to tin using single-element precursors. We show that monolayer SnS crystals, up to several tens of micrometers in lateral scale, can be easily and safely obtained by high-temperature etching of bulk SnS in a pure nitrogen gas atmosphere. These findings pave the way for device applications based on high-quality tin sulfide.
ISSN:2331-8422