Impact ionization coefficients along 4H-SiC 〈112¯0〉 in a wide temperature range

The impact ionization coefficients along 4H-SiC 〈112¯0〉 were determined in a wide temperature range from 294 K to 473 K. 4H-SiC (112¯0) p⎯n diodes were fabricated and photomultiplication measurements were conducted on two types of photodiodes to measure the multiplication factors of carriers. The ex...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-11, Vol.63 (11), p.118004
Main Authors: Kitawaki, Takeaki, Chi, Xilun, Kaneko, Mitsuaki, Kimoto, Tsunenobu
Format: Article
Language:English
Subjects:
4H-SiC
Electric fields
High temperature
Impact Ionization Coefficient
Ionization coefficients
Photodiodes
Silicon Carbide
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Summary:The impact ionization coefficients along 4H-SiC 〈112¯0〉 were determined in a wide temperature range from 294 K to 473 K. 4H-SiC (112¯0) p⎯n diodes were fabricated and photomultiplication measurements were conducted on two types of photodiodes to measure the multiplication factors of carriers. The extracted impact ionization coefficients of both electrons and holes along 4H-SiC 〈112¯0〉 decreased at high temperatures, which can be ascribed to the enhanced phonon scattering. On the basis of the results above, the critical electric field along 4H-SiC 〈112¯0〉 calculated from the obtained impact ionization coefficients increased with the temperature.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad8ab6