Multiple scattering of positively charged particles moving near the (111) plane in a silicon single crystal

• Published in: European physical journal plus 2024-11, Vol.139 (11), p.1041, Article 1041
• Main Authors: Scandale, W., Cerutti, F., Esposito, L. S., Garattini, M., Gilardoni, S., Losito, R., Masi, A., Mirarchi, D., Redaelli, S., Smirnov, G., Bandiera, L., Guidi, V., Mazzolari, A., Addesa, F. M., Iacoangeli, F., Galluccio, F., Afonin, A. G., Chesnokov, Yu. A., Durum, A. A., Maisheev, V. A., Sandomirskiy, Yu. E., Yanovich, A. A., Taratin, A. M., Gavrikov, Yu. A., Ivanova, P. Yu, Ivanov, Yu. M., Hall, G., Pesaresi, M., Rossi, R.
• Format: Article
• Language: English
• Subjects: Applied and Technical Physics; Asymmetry; Atomic; Channeling; Charged particles; Complex Systems; Condensed Matter Physics; Crystals; Mathematical and Computational Physics; Molecular; Multiple scatter; Optical and Plasma Physics; Physics; Physics and Astronomy; Regular Article; Silicon; Single crystals; Theoretical
• ISSN: 2190-5444; 2190-5444
• DOI: 10.1140/epjp/s13360-024-05851-3

The article is devoted to the study of the suppression of multiple scattering of positively charged particles with momenta of 180 GeV/c and 400 GeV/c passing through bent single crystals of silicon at small angles to the plane (111) both in channeling mode and in the above-barrier state. For the first time, the suppression of the effect of multiple scattering of non-channeling particles passing at a small angle to one of the planes of a silicon single crystal was observed. In addition, the asymmetry was observed in the multiple scattering of over-barrier particles with respect to their zero angle of entry into the single crystal.