Charge transport mechanism in [GeOx](z)[SiO2](1-z) based MIS structures

The mechanisms of conductivity in metal–insulator–semiconductor (MIS) structures based on [GeOx](z)[SiO2](1-z) films (0.25 ≤ z ≤ 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a p+-type silicon substrate are studied. Indium tin oxide deposite...

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Bibliographic Details
Published in:Applied physics letters 2024-12, Vol.125 (24)
Main Authors: Yushkov, I. D., Gismatulin, A. A., Prosvirin, I. P., Kamaev, G. N., Marin, D. V., Vergnat, M., Volodin, V. A.
Format: Article
Language:English
Subjects:
Charge transport
Current voltage characteristics
Germanium
Germanium oxides
Indium tin oxides
Infrared spectroscopy
MIS (semiconductors)
Raman spectra
Silicon dioxide
Silicon oxides
Silicon substrates
Space charge
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Summary:The mechanisms of conductivity in metal–insulator–semiconductor (MIS) structures based on [GeOx](z)[SiO2](1-z) films (0.25 ≤ z ≤ 1) fabricated by co-evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on a p+-type silicon substrate are studied. Indium tin oxide deposited by magnetron method is used as the top electrode. According to IR spectroscopy, Ge–O, Si–O, and Ge–O–Si bonds are detected in the films, while no features related to the presence of germanium clusters are found in the Raman spectra. The current–voltage characteristics (I–V curves) are measured at different temperatures and analyzed by applying the eight most common models of charge transport in MIS structures. It is found that the experimental I–V curves are most accurately approximated in the space charge limited current model, and the parameters of the charge traps are determined within this model.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0240239