Enhancing UV photodetector efficiency using germanium nanowalls synthesized by pulsed laser ablation technique

• Published in: Journal of materials science. Materials in electronics 2024-12, Vol.35 (36), p.2274, Article 2274
• Main Authors: Alharbi, Abdullah Marzouq, Rahman, Azhar Abdul, Ahmed, Naser M., Azman, Nurul Zahirah Noor, Almessiere, Munirah A., Alotaibi, Saud, Almutery, Aml
• Format: Article
• Language: English
• Subjects: Ablation; Bias; Characterization and Evaluation of Materials; Charge transport; Chemistry and Materials Science; Configurations; Current carriers; Efficiency; Electromagnetic absorption; Field emission microscopy; Field emission spectroscopy; Germanium; Laser ablation; Lasers; Light diffraction; Materials Science; Nanomaterials; Optical and Electronic Materials; Optical properties; Performance enhancement; Performance evaluation; Photoelectric effect; Photoelectric emission; Photometers; Photosensitivity; Pulsed lasers; Quantum efficiency; Silicon substrates; Spectrum analysis; Synthesis; Ultraviolet radiation; Zinc oxide
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-024-14035-9

The main purpose of this paper is to investigate the methods of enhancing the efficiency UV photodetection through germanium nanowalls, which were synthesized through the pulsed laser ablation technique. Germanium nanowalls (GeNWs) were used by integrating them between ZnO nanostructures and silicon (Si) substrates for the purpose of improving the sensitivity and responsivity. ZnO/GeNWs/Si and GeNWs/ZnO/Si were synthesized configurations and have been comprehensively characterized via methods such as field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction. UV–visible spectroscopy was used for the analysis of the optical properties to determine the changes in the absorption edge and calculated optical band gaps. Various bias voltages of UV light at 385 nm were used to determine the photocurrent responses. The ZnO/GeNWs/Si configuration has demonstrated an impressive photocurrent around 12.8 mA at 6 V, indicating significant enhancement in UV light absorption and carrier charge transport. Various characteristics, which include rise and decay times, photosensitivity, normalized current responsiveness and temporal response, were evaluated. The ZnO/GeNWs/Si photodetector exhibited outstanding performance, showing a 31.8 A/W of responsiveness, 103.43 quantum efficiency, 6 V bias voltage, 9600% sensitivity, and 4.90 × 10 10 Jones detectivity when exposed to UV light at 385 nm. This study proposes a modern approach utilizing synthesized GeNWs to enhance UV photodetection via pulsed laser ablation. This method has effectively demonstrated the potential to improve the performance of ZnO/Si systems. The research offers valuable insightful into the optimization and fabrication of nanomaterial-based photodetectors, highlighting their versatile applications.