Plasmon-Enhanced Performance in Self-Powered Solar-Blind CuCrO2/β-Ga2O3 Heterojunction Photodetectors With Al Nanoparticles

\beta -Ga2O3-based heterojunction photodetectors (PDs) generally suffer from unsatisfactory low responsivity and low external quantum efficiency (EQE) due to the carrier blocking from imperfect band alignment. Herein, we demonstrate for the first time the significantly improved performance of self-p...

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Bibliographic Details
Published in:IEEE sensors journal 2024-12, Vol.24 (24), p.40717-40724
Main Authors: Lin, Jialong, Li, Ying, He, Xiyao, Peng, Xingkun, Wei, Shubo, Chen, Zuhui, Long, Hao, Yang, Weifeng
Format: Article
Language:English
Subjects:
Al nanoparticles (NPs)
CuCrO₂/β-Ga₂O
Dark current
Electric fields
Electron beams
Evaporation
Gallium oxides
heterojunction
Heterojunctions
High temperature
Metals
Nanoparticles
Performance enhancement
Photodetectors
Photometers
Photonic band gap
Quantum efficiency
Sensors
solar-blind photodetector (PD)
surface plasmon
Surface plasmon resonance
X-ray scattering
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Summary:\beta -Ga2O3-based heterojunction photodetectors (PDs) generally suffer from unsatisfactory low responsivity and low external quantum efficiency (EQE) due to the carrier blocking from imperfect band alignment. Herein, we demonstrate for the first time the significantly improved performance of self-powered solar-blind CuCrO2/ \beta -Ga2O3 heterojunction PDs by innovatively introducing Al nanoparticles (NPs) prepared by a facile electron beam evaporation technology with the subsequent high-temperature annealing technique. Compared with the conventional CuCrO2/ \beta -Ga2O3 PD, the responsivity, detectivity, and EQE of the CuCrO2/ \beta -Ga2O3 PD with Al NPs increase by 28.9, 39, and 28.9 times, respectively. In particular, our CuCrO2/ \beta -Ga2O3 PDs show a low dark current of 3.67 pA, a high responsivity of 0.82 A/W, a high detectivity of 8.09\times 10^{{13}} Jones, and a high EQE of 402.8%, which outperform most reported \beta -Ga2O3-based heterojunction PDs. Such brilliant performances can be attributed to the Al NPs, which improve the efficiency of hole injection and accelerate the generation rate and separation speed of photogenerated carriers via the combined effect of the localized electric field and the localized surface plasmon resonance (LSPR). These results show that the CuCrO2/ \beta -Ga2O3 PD with Al NPs could achieve superior solar-blind sensitivity, thus providing a simple and feasible method to achieve high-performance ultraviolet PDs.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2024.3491799