Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

Conclusion The defects and their thermo-evolution in the hetero-integrated GaN films on Si(100) substrate were thoroughly studied. The nano-cavity defects and residual H ions in the as-transferred GaN film evolved into larger size cavity defects due to the OR mechanism and MC mechanism, while the Ga...

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Published in:Science China. Information sciences 2023-11, Vol.66 (11), p.219403, Article 219403
Main Authors: Shi, Hangning, Yi, Ailun, Ding, Jiaxin, Liu, Xudong, Qin, Qingcheng, Yi, Juemin, Hu, Junjie, Wang, Miao, Cai, Demin, Wang, Jianfeng, Xu, Ke, Mu, Fengwen, Suga, Tadatomo, Heller, René, Wang, Mao, Zhou, Shengqiang, Xu, Wenhui, Huang, Kai, You, Tiangui, Ou, Xin
Format: Article
Language:English
Subjects:
Computer Science
Defect annealing
Evolution
Information Systems and Communication Service
Letter
Low temperature
Silicon substrates
Thin films
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Summary:Conclusion The defects and their thermo-evolution in the hetero-integrated GaN films on Si(100) substrate were thoroughly studied. The nano-cavity defects and residual H ions in the as-transferred GaN film evolved into larger size cavity defects due to the OR mechanism and MC mechanism, while the GaN lattice was recovered and the NBE emission of the post-annealed GaN film at low temperature reappeared. The results of PAS and RBS also confirmed the evolution of defects and the recovery of GaN lattice.
ISSN:1674-733X
1869-1919
DOI:10.1007/s11432-022-3668-0