Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Recessed-gate high-electron-mobility transistors (HEMTs) were fabricated using a Cl 2 -based plasma etch to study device performance as a function of recess depth. Devices were fabricated with recess depths varying from 0 nm to 25 nm on a standard HEMT structure using a controllable, low-power etch...

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Bibliographic Details
Published in:Journal of electronic materials 2010-05, Vol.39 (5), p.478-481
Main Authors: Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electroluminescence
Electronics and Microelectronics
Instrumentation
Materials Science
Optical and Electronic Materials
Plasma etching
Solid State Physics
Transistors
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Summary:Recessed-gate high-electron-mobility transistors (HEMTs) were fabricated using a Cl 2 -based plasma etch to study device performance as a function of recess depth. Devices were fabricated with recess depths varying from 0 nm to 25 nm on a standard HEMT structure using a controllable, low-power etch recipe. It is shown that the threshold voltage approached zero as the recess approached the AlGaN/GaN heterojunction. At the same time, mobility decreased an order of magnitude over the etch range studied, and sheet carrier density also decreased. In addition to direct-current (DC) I – V and Hall measurements, electroluminescence was also used to characterize plasma damage in these devices.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-010-1111-x