Room-Temperature Preparation of High-Transparency Low-Resistivity ITO Films by Ion Beam Sputtering

• Published in: Journal of electronic materials 2010-10, Vol.39 (10), p.2352-2358
• Main Authors: Shen, Jung-Hsiung, Yeh, Sung-Wei, Gan, Dershin, Yang, Koho, Huang, Hsing-Lu, Mao, Shih-Wei
• Format: Article
• Language: English
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Electronics and Microelectronics; Exact sciences and technology; Heat resistance; Instrumentation; Ion and electron beam-assisted deposition; ion plating; Ion beams; Materials; Materials Science; Methods of deposition of films and coatings; film growth and epitaxy; Optical and Electronic Materials; Other inorganic semiconductors; Physics; Solid State Physics; Temperature
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-010-1328-8

Low-temperature preparation of transparent conducting electrodes is essential for flexible optoelectronic devices. Tin-doped In 2 O 3 films with high transparency and low electrical resistance were prepared at room temperature using a radiofrequency ion beam sputtering system. Specimens with a low sheet resistivity of 10 −4  Ω cm and a high visible-light transmittance of 85% to 90% were obtained. Hall measurements were used to determine mobility and carrier concentration, and the effects on resistivity are discussed.