Field Emission from Silicon Implanted with Carbon and Nitrogen Followed by Electron Beam Annealing

• Published in: Journal of electronic materials 2010-08, Vol.39 (8), p.1262-1267
• Main Authors: Carder, D.A., Markwitz, A., Kennedy, J.
• Format: Article
• Language: English
• Subjects: Annealing; Carbon; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron and ion emission by liquids and solids; impact phenomena; Electronics and Microelectronics; Exact sciences and technology; Field emission, ionization, evaporation, and desorption; Instrumentation; Materials Science; Methods of nanofabrication; Nanoscale pattern formation; Nanostructured materials; Nitrogen; Optical and Electronic Materials; Physics; Scientific imaging; Self-assembly; Silicon; Solid State Physics
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-010-1224-2

Field emission has been demonstrated from silicon that has been ion- implanted with carbon and nitrogen. Self-assembled silicon nanostructures were prepared as a template on the surface of wafer silicon, prior to multiple low-energy ion implantations. Following ion implantation, the original surface nanostructuring was lost. However, after electron beam annealing, self-assembled surface nanostructures were observed. Nuclear reaction analysis and Rutherford backscattering spectrometry indicated a Si 0.6 C 0.1 N 0.3 layer extending to a depth of ~120 nm. Electron emission was measured from the as-implanted and post-annealed samples. The implanted and annealed sample showed a low turn-on field of 10 V/ μ m compared with 44 V/ μ m for the as-implanted sample.