Temperature Effect on Intermetallic Compound Growth Kinetics of Cu Pillar/Sn Bumps
The in situ intermetallic compound (IMC) growth in Cu pillar/Sn bumps was investigated by isothermal annealing at 120°C, 150°C, and 180°C using an in situ scanning electron microscope. Only the Cu 6 Sn 5 phase formed at the interface between the Cu pillar and Sn during the reflow process. The Cu 3 S...
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Published in: | Journal of electronic materials 2009-11, Vol.38 (11), p.2228-2233 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The
in situ
intermetallic compound (IMC) growth in Cu pillar/Sn bumps was investigated by isothermal annealing at 120°C, 150°C, and 180°C using an
in situ
scanning electron microscope. Only the Cu
6
Sn
5
phase formed at the interface between the Cu pillar and Sn during the reflow process. The Cu
3
Sn phase formed and grew at the interfaces between the Cu pillar and Cu
6
Sn
5
with increased annealing time. Total (Cu
6
Sn
5
+ Cu
3
Sn) IMC thickness increased linearly with the square root of annealing time. The growth slopes of total IMC decreased after 240 h at 150°C and 60 h at 180°C, due to the fact that the Cu
6
Sn
5
phase transforms to the Cu
3
Sn phase when all of the remaining Sn phase in the Cu pillar bump is completely exhausted. The complete consumption time of the Sn phase at 180°C was shorter than that at 150°C. The apparent activation energy for total IMC growth was determined to be 0.57 eV. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-009-0922-0 |