V-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

The V-doped ZnO thin films were prepared on Pt/TiO 2 /SiO 2 /Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V conten...

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Bibliographic Details
Published in:Ferroelectrics 2010-01, Vol.406 (1), p.10-15
Main Authors: Shao, W. D., Chen, X. F., Ren, W., Shi, P., Wu, X. Q., Tan, O. K., Zhu, W. G., Yao, X.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Devices
Dielectric loss
Dielectric loss and relaxation
Dielectric properties of solids and liquids
Dielectrics
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Diffraction
Electric fields
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Ii-vi semiconductors
Magnetron sputtering
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Permittivity (dielectric function)
Physics
piezoelectric
Radio frequencies
sputtering
Substrates
Thin films
Titanium dioxide
V-doped ZnO films
Vanadium
Zinc oxide
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Description
Summary:The V-doped ZnO thin films were prepared on Pt/TiO 2 /SiO 2 /Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2010.484319