InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 [Formula Omitted]

An avalanche photodiode (APD) using a InAlAs multiplication region and a type-II InGaAs/GaAsSb superlattice as the absorber (both lattice matched to InP) is reported. An optical and electrical characterization of the photodiode is performed. The APD exhibited an absorption cutoff wavelength of 2.5 ,...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-02, Vol.58 (2), p.486
Main Authors: Ong, Daniel S. G, Ng, Jo Shien, Goh, Yu Ling, Tan, Chee Hing, Zhang, Shiyong, David, John P. R
Format: Article
Language:English
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Summary:An avalanche photodiode (APD) using a InAlAs multiplication region and a type-II InGaAs/GaAsSb superlattice as the absorber (both lattice matched to InP) is reported. An optical and electrical characterization of the photodiode is performed. The APD exhibited an absorption cutoff wavelength of 2.5 , which is expected from the InGaAs/GaAsSb superlattice. A responsivity of 0.47 A/W (without gain) for the APD at a 2004-nm wavelength was demonstrated. The APD breakdown voltage showed a weak temperature dependence of 40 mV/K, as a result of the excellent temperature stability in InAlAs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2090352