Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

An attractive combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)), including a relatively high spontaneous polarization and low dielectric constant as well as low processing temperature makes this material useful for studying the ferroe...

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Bibliographic Details
Published in:Ferroelectrics 2010-01, Vol.409 (1), p.185-189
Main Authors: Stolichnov, Igor, Gysel, Roman, Tagantsev, Alexander K., Riester, Sebastian W. E., Setter, Nava, Salvatore, Giovanni A., Bouvet, Didier, Ionescu, Adrian M.
Format: Article
Language:English
Subjects:
Applied sciences
Depolarization
Dielectric properties
Drains
Electronics
Exact sciences and technology
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Field effect transistors
Gates
Materials science
Microscopy
Polarization
Polymers
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spontaneous
Temperature effects
Transistors
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Summary:An attractive combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)), including a relatively high spontaneous polarization and low dielectric constant as well as low processing temperature makes this material useful for studying the ferroelectric gate operation for 1T nonvolatile ferroelecetric memory applications. Here we explore a silicon-based ferroelectric field effect transistor with P(VDF-TrFE) gate showing a persistent switching of the drain current with the "on"/"off" current ratio of 10 3 -10 2 and retention exceeding 5 days. The physical mechanism of the retention loss has been addressed by monitoring the drain current relaxation in combination with the time-resolved piezo-force scanning probe microscopy. The results suggest that the retention loss is controlled by the polarization screening due to the charge injection into the interface-adjacent layer rather than the polarization loss due to the depolarization effect.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150193.2010.486237