Synthesis of Pr^sub 6^O^sub 11^ and Y^sub 2^O^sub 3^ Doped Zinc Varistors by High Energy Milling

High voltage zinc varistors were synthesized by high-energy milling with Pr...O... and Y...O... doped ZnO-Bi...O... system as raw materials. The effects of high-energy milling on the microstructures, electrical properties and densities of samples were investigated in detail. The results show that hi...

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Published in:Ferroelectrics 2011-01, Vol.411 (1), p.93
Main Authors: Zhu, J F, Qi, G Q, Mao, H B, Wang, F, Yang, H B
Format: Article
Language:English
Subjects:
Chemical synthesis
Electric properties
Microstructure
Semiconductor doping
Semiconductors
Sintering
Zinc
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container_title Ferroelectrics
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creator Zhu, J F
Qi, G Q
Mao, H B
Wang, F
Yang, H B
description High voltage zinc varistors were synthesized by high-energy milling with Pr...O... and Y...O... doped ZnO-Bi...O... system as raw materials. The effects of high-energy milling on the microstructures, electrical properties and densities of samples were investigated in detail. The results show that high-energy milling make the as-prepared varistors have refined and homogeneous microstructures, which result in improving their electrical properties. The optimal prepared samples were obtained by milling for 7.5 hours and sintering at 1100...C, which exhibited varistor voltage (V...) of about 533 V/mm, non linear coefficient (α) reaching 36 and leakage current (I...) of 2.96 ...A. (ProQuest: ... denotes formulae/symbols omitted.)
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_849216222</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2257296641</sourcerecordid><originalsourceid>FETCH-proquest_journals_8492162223</originalsourceid><addsrcrecordid>eNqNis0KgkAURocoyH7e4dJecGZUcl2GmygoglpMWU06IjM2Vxe-fSI-QKvD-c43Ig4NQu4GlLIxcTyPBq5HIz4lM8SiU-77kUMep1bXuUSFYD5wtAKbJ4Ti0JNSAal-w7U3NqxcwNZU8g03pV9wSa3C2liEZwuJynKItbRZC3tVlkpnCzL5pCXK5cA5We3i8yZxK2u-jcT6XpjG6i7d137EaMgY43-dfic2Q1k</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>849216222</pqid></control><display><type>article</type><title>Synthesis of Pr^sub 6^O^sub 11^ and Y^sub 2^O^sub 3^ Doped Zinc Varistors by High Energy Milling</title><source>Taylor and Francis Science and Technology Collection</source><creator>Zhu, J F ; Qi, G Q ; Mao, H B ; Wang, F ; Yang, H B</creator><creatorcontrib>Zhu, J F ; Qi, G Q ; Mao, H B ; Wang, F ; Yang, H B</creatorcontrib><description>High voltage zinc varistors were synthesized by high-energy milling with Pr...O... and Y...O... doped ZnO-Bi...O... system as raw materials. The effects of high-energy milling on the microstructures, electrical properties and densities of samples were investigated in detail. The results show that high-energy milling make the as-prepared varistors have refined and homogeneous microstructures, which result in improving their electrical properties. The optimal prepared samples were obtained by milling for 7.5 hours and sintering at 1100...C, which exhibited varistor voltage (V...) of about 533 V/mm, non linear coefficient (α) reaching 36 and leakage current (I...) of 2.96 ...A. (ProQuest: ... denotes formulae/symbols omitted.)</description><identifier>ISSN: 0015-0193</identifier><identifier>EISSN: 1563-5112</identifier><language>eng</language><publisher>Philadelphia: Taylor &amp; Francis Ltd</publisher><subject>Chemical synthesis ; Electric properties ; Microstructure ; Semiconductor doping ; Semiconductors ; Sintering ; Zinc</subject><ispartof>Ferroelectrics, 2011-01, Vol.411 (1), p.93</ispartof><rights>Copyright Taylor &amp; Francis Ltd. 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Zhu, J F</creatorcontrib><creatorcontrib>Qi, G Q</creatorcontrib><creatorcontrib>Mao, H B</creatorcontrib><creatorcontrib>Wang, F</creatorcontrib><creatorcontrib>Yang, H B</creatorcontrib><title>Synthesis of Pr^sub 6^O^sub 11^ and Y^sub 2^O^sub 3^ Doped Zinc Varistors by High Energy Milling</title><title>Ferroelectrics</title><description>High voltage zinc varistors were synthesized by high-energy milling with Pr...O... and Y...O... doped ZnO-Bi...O... system as raw materials. The effects of high-energy milling on the microstructures, electrical properties and densities of samples were investigated in detail. The results show that high-energy milling make the as-prepared varistors have refined and homogeneous microstructures, which result in improving their electrical properties. The optimal prepared samples were obtained by milling for 7.5 hours and sintering at 1100...C, which exhibited varistor voltage (V...) of about 533 V/mm, non linear coefficient (α) reaching 36 and leakage current (I...) of 2.96 ...A. (ProQuest: ... denotes formulae/symbols omitted.)</description><subject>Chemical synthesis</subject><subject>Electric properties</subject><subject>Microstructure</subject><subject>Semiconductor doping</subject><subject>Semiconductors</subject><subject>Sintering</subject><subject>Zinc</subject><issn>0015-0193</issn><issn>1563-5112</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNis0KgkAURocoyH7e4dJecGZUcl2GmygoglpMWU06IjM2Vxe-fSI-QKvD-c43Ig4NQu4GlLIxcTyPBq5HIz4lM8SiU-77kUMep1bXuUSFYD5wtAKbJ4Ti0JNSAal-w7U3NqxcwNZU8g03pV9wSa3C2liEZwuJynKItbRZC3tVlkpnCzL5pCXK5cA5We3i8yZxK2u-jcT6XpjG6i7d137EaMgY43-dfic2Q1k</recordid><startdate>20110124</startdate><enddate>20110124</enddate><creator>Zhu, J F</creator><creator>Qi, G Q</creator><creator>Mao, H B</creator><creator>Wang, F</creator><creator>Yang, H B</creator><general>Taylor &amp; Francis Ltd</general><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110124</creationdate><title>Synthesis of Pr^sub 6^O^sub 11^ and Y^sub 2^O^sub 3^ Doped Zinc Varistors by High Energy Milling</title><author>Zhu, J F ; Qi, G Q ; Mao, H B ; Wang, F ; Yang, H B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_8492162223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Chemical synthesis</topic><topic>Electric properties</topic><topic>Microstructure</topic><topic>Semiconductor doping</topic><topic>Semiconductors</topic><topic>Sintering</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, J F</creatorcontrib><creatorcontrib>Qi, G Q</creatorcontrib><creatorcontrib>Mao, H B</creatorcontrib><creatorcontrib>Wang, F</creatorcontrib><creatorcontrib>Yang, H B</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Ferroelectrics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, J F</au><au>Qi, G Q</au><au>Mao, H B</au><au>Wang, F</au><au>Yang, H B</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of Pr^sub 6^O^sub 11^ and Y^sub 2^O^sub 3^ Doped Zinc Varistors by High Energy Milling</atitle><jtitle>Ferroelectrics</jtitle><date>2011-01-24</date><risdate>2011</risdate><volume>411</volume><issue>1</issue><spage>93</spage><pages>93-</pages><issn>0015-0193</issn><eissn>1563-5112</eissn><abstract>High voltage zinc varistors were synthesized by high-energy milling with Pr...O... and Y...O... doped ZnO-Bi...O... system as raw materials. The effects of high-energy milling on the microstructures, electrical properties and densities of samples were investigated in detail. The results show that high-energy milling make the as-prepared varistors have refined and homogeneous microstructures, which result in improving their electrical properties. The optimal prepared samples were obtained by milling for 7.5 hours and sintering at 1100...C, which exhibited varistor voltage (V...) of about 533 V/mm, non linear coefficient (α) reaching 36 and leakage current (I...) of 2.96 ...A. (ProQuest: ... denotes formulae/symbols omitted.)</abstract><cop>Philadelphia</cop><pub>Taylor &amp; Francis Ltd</pub></addata></record>
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subjects Chemical synthesis
Electric properties
Microstructure
Semiconductor doping
Semiconductors
Sintering
Zinc
title Synthesis of Pr^sub 6^O^sub 11^ and Y^sub 2^O^sub 3^ Doped Zinc Varistors by High Energy Milling
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T05%3A03%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20of%20Pr%5Esub%206%5EO%5Esub%2011%5E%20and%20Y%5Esub%202%5EO%5Esub%203%5E%20Doped%20Zinc%20Varistors%20by%20High%20Energy%20Milling&rft.jtitle=Ferroelectrics&rft.au=Zhu,%20J%20F&rft.date=2011-01-24&rft.volume=411&rft.issue=1&rft.spage=93&rft.pages=93-&rft.issn=0015-0193&rft.eissn=1563-5112&rft_id=info:doi/&rft_dat=%3Cproquest%3E2257296641%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_journals_8492162223%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=849216222&rft_id=info:pmid/&rfr_iscdi=true