Oxygen-Soluble Gate Electrodes for Prolonged High-[Formula Omitted] Gate-Stack Reliability

We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the applica...

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Bibliographic Details
Published in:IEEE electron device letters 2011-03, Vol.32 (3), p.252
Main Authors: Raghavan, Nagarajan, Pey, Kin Leong, Wu, Xing, Liu, Wenhu, Li, Xiang, Bosman, Michel, Kauerauf, Thomas
Format: Article
Language:English
Online Access:Get full text
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Summary:We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2099096