Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters

We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au n...

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Bibliographic Details
Published in:Journal of nanomaterials 2009-01, Vol.2009 (2009), p.1-5
Main Authors: Yang, M. D., Wu, S. W., Shu, G. W., Wang, J. S., Shen, J. L., Wu, C. H., Lin, C. A. J., Chang, W. H., Lin, T. Y., Lu, Tsung-Chun, Kuo, H. C.
Format: Article
Language:English
Subjects:
Efficiency
Light emitting diodes
Nanomaterials
Nanoparticles
Nuclear energy
Organic chemicals
Photovoltaic cells
Solar energy
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Summary:We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells.
ISSN:1687-4110
1687-4129
DOI:10.1155/2009/840791