Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications

A novel 2-bits-per-transistor mask-programmable read-only memory (mask ROM) device with gate-to-drain nonoverlapped implantation (NOI) is investigated in this paper. The NOI mask ROM can be coded by using the lightly doped drain implantation mask and related processes. This simple coding scheme is f...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-09, Vol.56 (9), p.2099-2106
Main Authors: Yuan-Feng Chen, Jeng Gong, Wei-Jen Tung, Shang-Wei Chou, Jeng, E.S.
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Design. Technologies. Operation analysis. Testing
Devices
Drains
Electrically erasable
Electrically erasable programmable read-only memory (EEPROM)
Electronics
EPROM
Exact sciences and technology
Implantation
Integrated circuits
Integrated circuits by function (including memories and processors)
Logic
Logic gates
mask-programmable read-only memory (mask ROM)
Masks
MOSFET circuits
nonoverlapped implantation (NOI)
Nonvolatile memory
nonvolatile memory (NVM)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon compounds
Threshold voltage
Transistors
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Summary:A novel 2-bits-per-transistor mask-programmable read-only memory (mask ROM) device with gate-to-drain nonoverlapped implantation (NOI) is investigated in this paper. The NOI mask ROM can be coded by using the lightly doped drain implantation mask and related processes. This simple coding scheme is fully compatible with industrial CMOS processing. The measured threshold voltage difference DeltaV th between the two logic states (ldquo0rdquo and ldquo1rdquo) of the devices is approximately 0.6 V. Moreover, DeltaV th can be improved when the pocket implant is incorporated into the NOI region based on the device simulation. The characteristics of this NOI mask ROM, including 2-bits-per-transistor operation, body effects, hot carrier impact, and array layouts, are investigated. By sharing the same array layout and readout circuit, the potential of NOI devices' seamless migration between the mask ROM and electrically erasable programmable read-only memory functions are also demonstrated.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2026521