Chromium-Induced Nanocrystallization of a-Si Thin Films into the Wurtzite Structure

Chromium metal-induced nanocrystallization of amorphous silicon (a-Si) thin films is reported. The nanocrystalline nature of these films is confirmed from X-ray diffraction and Raman spectroscopy. Significantly, the deconvolution of Raman spectra reveals that the thin films were crystallized in a mi...

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Bibliographic Details
Published in:Journal of nanomaterials 2008-01, Vol.2008 (2008), p.1-6
Main Authors: Kumar, K. Uma Mahendra, Krishna, M. Ghanashyam
Format: Article
Language:English
Subjects:
Annealing
Chromium
Crystallization
Nanocrystals
Nanomaterials
Point defects
Spectrum analysis
Thin films
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Summary:Chromium metal-induced nanocrystallization of amorphous silicon (a-Si) thin films is reported. The nanocrystalline nature of these films is confirmed from X-ray diffraction and Raman spectroscopy. Significantly, the deconvolution of Raman spectra reveals that the thin films were crystallized in a mixed phase of cubic diamond and wurzite structure as evidenced by the lines at 512 and 496 cm−1, respectively. The crystallite sizes were between 4 to 8 nm. Optical properties of the crystallized silicon, derived from spectral transmittance curves, revealed high transmission in the region above the band gap. Optical band gap varied between 1.3 to 2.0 eV depending on the nature of crystallinity of these films and remained unaltered with increase in Cr addition from 5 to 30%. This signifies that the electronic structure of the nanocrystalline Silicon films is not affected considerably inspite of the presence of metal silicides and the process of crystallization.
ISSN:1687-4110
1687-4129
DOI:10.1155/2008/736534