Effect of high pressure on the metal-dielectric transition and the pseudo-gap temperature range in oxygen deficient YBa^sub 2^Cu^sub 3^O^sub 7-[delta]^ single crystals

The effect of high hydrostatic pressure on the electric resistance in the ab-plane of the oxygen deficient YBa^sub 2^Cu^sub 3^O^sub 7-δ^ single crystals is investigated. It is shown that the pressure induced redistribution of the labile oxygen results in the strengthening of the phase immiscibility...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2011-01, Vol.22 (1), p.20
Main Authors: Vovk, R V, Zavgorodniy, A A, Obolenskii, M A, Goulatis, I L, Chroneos, A, Pinto Simoes, V M
Format: Article
Language:English
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Summary:The effect of high hydrostatic pressure on the electric resistance in the ab-plane of the oxygen deficient YBa^sub 2^Cu^sub 3^O^sub 7-δ^ single crystals is investigated. It is shown that the pressure induced redistribution of the labile oxygen results in the strengthening of the phase immiscibility in layers. This process is accompanied with structural relaxation and ascending diffusion processes within the volume of the experimental sample. We observe a significant displacement of the temperature range that corresponds to metal-dielectric type transitions and the pseudo-gap realization regime.[PUBLICATION ABSTRACT]
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-010-0076-0