SiO[Formula Omitted] Barriers for Increasing Gain Events in Solid-State Impact-Ionization Multipliers

Planar versions of the SIM suffer from nonideal impact ionization efficiency as a result of injected carriers drifting through the device's depletion region to the output electrode without passing through the highest electric field regions and undergoing ionization events.

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2009-09, Vol.45 (9), p.1068
Main Authors: Johnson, M.S, Beutler, J.L, Nelson, A.P, Yuihin Tseung, Yuihin Tseung, Hawkins, A.R
Format: Article
Language:English
Subjects:
Efficiency
Ions
Online Access:Get full text
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Description
Summary:Planar versions of the SIM suffer from nonideal impact ionization efficiency as a result of injected carriers drifting through the device's depletion region to the output electrode without passing through the highest electric field regions and undergoing ionization events.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2009.2021144