Individually Addressable AlInGaN Micro-LED Arrays With CMOS Control and Subnanosecond Output Pulses

We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum dia...

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Bibliographic Details
Published in:IEEE photonics technology letters 2009-06, Vol.21 (12), p.811-813
Main Authors: McKendry, J., Rae, B.R., Zheng Gong, Muir, K.R., Guilhabert, B., Massoubre, D., Gu, E., Renshaw, D., Dawson, M.D., Henderson, R.K.
Format: Article
Language:English
Subjects:
Application software
Arrays
Biomedical optical imaging
complementary metal-oxide-semiconductor (CMOS)
Diodes
Direct current
Emittance
GaN
Linear feedback shift registers
micro-light-emitting diodes (micro-LEDs)
microdisplays
Optical computing
Optical control
Optical devices
Optical feedback
Optical pulses
Optical transmitters
Pixels
Power generation
Square waves
Trains
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Summary:We report the fabrication and characterization of an ultraviolet (370 nm) emitting AlInGaN-based micro-light- emitting diode (micro-LED) array integrated with complementary metal-oxide-semiconductor control electronics. This configuration allows an 8 × 8 array of micro-LED pixels, each of 72-mum diameter, to be individually addressed. The micro-LED pixels can be driven in direct current (dc), square wave, or pulsed operation, with linear feedback shift registers (LFSRs) allowing the output of the micro-LED pixels to mimic that of an optical data transmitter. We present the optical output power versus drive current characteristics of an individual pixel, which show a micro-LED output power of up to 570 muW in dc operation. Representative optical pulse trains demonstrating the micro-LEDs driven in square wave and LFSR modes, and controlled optical pulsewidths from 300 ps to 40 ns are also presented.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2019114