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Fabrication of the InGaN-Based Light-Emitting Diodes Through a Photoelectrochemical Process

InGaN-based light-emitting diodes (LEDs) with a lateral-etched (LE) undercut structure were fabricated through a photoelectrochemical-etching process. The LE-LED was fabricated with an undercut structure, where the InGaN layer acted as a sacrificial layer without reducing the effective emission area...

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Bibliographic Details
Published in:IEEE photonics technology letters 2009-08, Vol.21 (16), p.1142-1144
Main Authors: Chia-Feng Lin, Chung-Chieh Yang, Jui-Fen Chien, Chun-Min Lin, Kuei-Ting Chen, Yen, S.K.
Format: Article
Language:English
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Summary:InGaN-based light-emitting diodes (LEDs) with a lateral-etched (LE) undercut structure were fabricated through a photoelectrochemical-etching process. The LE-LED was fabricated with an undercut structure, where the InGaN layer acted as a sacrificial layer without reducing the effective emission area. The electroluminescence (EL) spectrum of the LE-LED had a wavelength blueshift phenomenon of 4.6 nm when compared with a standard-LED (ST-LED) at a 30-A/cm 2 current density. The wavelength blueshift phenomenon of the EL emission peaks were measured as 5.5 and 4.3 nm by varying the injection current density from 1.5 to 30 A/cm 2 for the ST-LED and the LE-LED. In a bias-dependent micro-photoluminescence measurement, the blueshift phenomenon of a peak wavelength for the LE-LED was smaller than for the ST-LED. These results were attributed to a partially reduced piezoelectric field in the InGaN active layer and larger light extraction efficiency in the LE-LED structure.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2023677